An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs
نویسنده
چکیده
When applied to partially depleted SOI MOSFETs, the energy transport model predicts anomalous output characteristics. The effect that the drain current reaches a maximum and then decreases is peculiar to the energy transport model. It is not present in drift-diffusion simulations and its occurrence in measurements is questionable. The effect is due to an overestimation of the diffusion of channel hot carriers into the floating body. A modified energy transport model is proposed which describes hot carrier diffusion more realisticly and allows for proper simulation of SOI MOSFETs.
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